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Metal‐Insulator Transition in GaAs/AlGaAs Heterostructures: Acoustic Study

AIP Conf. Proc. 893, pp. 545-546; doi:http://dx.doi.org/10.1063/1.2730007 (2 pages)

PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006
Date: 24-28 July 2006
Location: Vienna (Austria)
I. L. Drichko1, A. M. Dyakonov1, I. Yu. Smirnov1, and A. I. Toropov2

1A.F. Ioffe Physicotechnical Institute of RAS 26 Polytekhnicheskaya, St Petersburg 194021, Russia
2Institute of Semiconductor Physics, Siberian Division, Russian Academy of Sciences, pr. Akademika Lavrent’eva 13, Novosibirsk, 630090 Russia

The interaction of surface acoustic waves (SAW) with the Si “underdoped” n‐GaAs/AlGaAs heterostructure with high photosensitivity has been studied. In the unexposed state, the 2D channel conductivity at T=4.2 K was less than 10−8 Ohm−1. Under the exposure of the LED light it was possible to increase the conductivity by 5 orders of magnitude, up to 10−3 Ohm−1. Conductivity dependence studies of the acousto‐electric effects in the system allowed to elucidate the percolation nature of metal‐insulator transition. An unusual property of the system was also its room‐temperature sensitivity to the light. © 2007 American Institute of Physics

© 2007 American Institute of Physics

KEYWORDS and PACS

PACS

  • 71.30.+h

    Metal-insulator transitions and other electronic transitions

  • 72.80.Ey

    III-V and II-VI semiconductors

  • 73.40.Kp

    III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions

  • 72.50.+b

    Acoustoelectric effects

  • 77.65.Dq

    Acoustoelectric effects and surface acoustic waves (SAW) in piezoelectrics

ARTICLE DATA

PUBLICATION DATA

ISSN

0094-243X (print)  
1551-7616 (online)

ISBN:

978-0-7354-0397-0

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