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Spin g‐factor and Cyclotron Mass of Electrons in GaAs/Ga1−xAlxAs Quantum Wells

AIP Conf. Proc. 893, pp. 541-542; doi:http://dx.doi.org/10.1063/1.2730005 (2 pages)

PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006
Date: 24-28 July 2006
Location: Vienna (Austria)
P. Pfeffer and W. Zawadzki

Institute of Physics, Polish Academy of Sciences, Al.Lotnikow 32/46, 02‐668 Warsaw, Poland

Five‐level P⋅p model of the band structure for GaAs‐type materials in the presence of a magnetic field parallel to the growth direction is used to describe the spin and orbital properties of the Γ6c conduction electrons in GaAs/Ga1−xAlxAs quantum wells (QWs). It is demonstrated that the existing theory of the spin g∗‐factor in III‐V heterostructures based on the three‐level model is inadequate for various reasons. Our theory takes into account the spin splitting related to the bulk inversion asymmetry (Dresselhaus mechanism), as well as contribution of the Γ8c, Γ7c higher conduction levels. Our theory gives an excellent description of existing experimental data for the g∗‐value in GaAs/Ga0.67Al0.33As rectangular QWs as a function of the well width. We also describe the cyclotron mass in GaAs/Ga1−xAlxAs QWs. © 2007 American Institute of Physics

© 2007 American Institute of Physics

KEYWORDS and PACS

PACS

  • 73.21.Fg

    Quantum wells

  • 71.20.Nr

    Semiconductor compounds

  • 71.18.+y

    Fermi surface: calculations and measurements; effective mass, g factor

  • 76.40.+b

    Diamagnetic and cyclotron resonances

  • 71.70.Ej

    Spin-orbit coupling, Zeeman and Stark splitting, Jahn-Teller effect

ARTICLE DATA

PUBLICATION DATA

ISSN

0094-243X (print)  
1551-7616 (online)

ISBN:

978-0-7354-0397-0


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