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NOISE AND FLUCTUATIONS: 18th International Conference on Noise and Fluctuations - ICNF 2005 Date: 19-23 September 2005 Location: Salamanca (Spain) ISBN: 0-7354-0267-1 Editor(s): Tomás González, Javier Mateos, Daniel Pardo

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Noise in Advanced Electronic Devices and Circuits

M. Jamal Deen and O. Marinov

AIP Conf. Proc. 780, pp. 3-12; doi:http://dx.doi.org/10.1063/1.2036687 (10 pages)

Online Publication Date: 24 August 2005

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State‐of‐the‐art low‐frequency and high‐frequency noise performance and modeling in modern semiconductor devices and circuits are discussed. The increase of noise‐to‐DC current ratio may compromise the circuit applications in near future. The low‐frequency noise (LFN) tends to a log‐normal distribution. Since the random‐telegraph‐signal (RTS) noise is pronounced in submicron devices, then new techniques being used to characterize of multilevel RTS are discussed. High‐frequency noise modeling and sample experimental results are presented, including the important effect of gate‐tunneling current for future devices. For the RF circuits, we discuss the phase noise in voltage‐controlled oscillators (VCO) based on ring oscillators and LC‐tank VCOs with and without automatic amplitude control. Finally, the effects of hot‐carrier stress on the performance of a VCO is presented and discussed. © 2005 American Institute of Physics
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07.50.Hp Electrical noise and shielding equipment
85.40.Qx Microcircuit quality, noise, performance, and failure analysis

Control and Rectification in Collective Stochastic Systems

Juan M. R. Parrondo and Luis Dinís

AIP Conf. Proc. 780, pp. 15-20; doi:http://dx.doi.org/10.1063/1.2036688 (6 pages)

Online Publication Date: 24 August 2005

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In this paper we review two basic and related mechanisms rectifying fluctuations: Brownian ratchets and paradoxical games. We focus our study on the effect of control in both ratchets and games. © 2005 American Institute of Physics
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05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

A Form of Active Brownian motor‐like on a (nonlinear) Toda lattice

E. del Rio, W. Ebeling, and M. G. Velarde

AIP Conf. Proc. 780, pp. 21-24; doi:http://dx.doi.org/10.1063/1.2036689 (4 pages)

Online Publication Date: 24 August 2005

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Results are provided about the evolution of a charged Brownian particle (an “electron”) interacting with with particles or “units” placed on a one‐dimensional Toda lattice. The thermal bath is a Gaussian white noise obeying Einstein’s fluctuation‐dissipation theorem. The electron‐lattice interaction is modeled by a Coulomb pseudo‐potential. Lattice compressions create soliton excitations (dissipative solitons) that may or may not bind the electron. The electron’s eventual trajectory depends on the (noise) temperature and on the value of the Brownian damping coefficient. It also depends on the landscape displayed by the Coulomb pseudo‐potential that allows waves traveling in either direction. Hence the system operates as a drifting ratchet, a kind of active Brownian motor for the transport of particles (or charges) along or against the solitonic motion. © 2005 American Institute of Physics
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05.40.Jc Brownian motion
05.40.Ca Noise
05.70.Ln Nonequilibrium and irreversible thermodynamics
05.45.Yv Solitons

Diffusion Acceleration in Randomly Switching Sawtooth Potential

Alexander A. Dubkov and Bernardo Spagnolo

AIP Conf. Proc. 780, pp. 25-28; doi:http://dx.doi.org/10.1063/1.2036690 (4 pages)

Online Publication Date: 24 August 2005

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We investigate an overdamped Brownian motion in symmetric sawtooth periodic potential switched by Markovian dichotomous noise between two configurations. The two configurations differ each other by a translation of half of period. The calculation of the effective diffusion coefficient is reduced to the mean first‐passage time problem, and we obtain the exact expression valid for arbitrary mean rate of switchings and arbitrary intensity of white Gaussian noise. We find the area at parameters plane where acceleration of diffusion in comparison with the free diffusion case takes place. © 2005 American Institute of Physics
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05.40.Jc Brownian motion
05.40.Ca Noise

Current Fluctuations in Degenerate Non‐Equilibrium Systems

R. Katilius, S. Reggiani, and M. Rudan

AIP Conf. Proc. 780, pp. 29-32; doi:http://dx.doi.org/10.1063/1.2036691 (4 pages)

Online Publication Date: 24 August 2005

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Noise characteristics of degenerate electron gas in two‐ or three‐dimensional channels at moderate/high electric fields are investigated theoreticaly at densities sufficient for the electron temperature approximation to work. Current fluctuations are sensitive to additional correlation of occupancies of one‐electron states created by inter‐electron (e‐e) collisions in non‐equilibrium. Specificity of degenerate systems lies in the fact that the most non‐trivial part of correlation is intrinsically of a two‐particle nature. The degeneracy effects violate the macroscopic noise‐response relations valid for Boltzmann’s statistics. The method is worked out for calculating the source of correlation of the electron energies as a function of the applied electric field for different electron‐lattice scattering mechanisms. © 2005 American Institute of Physics
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05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
72.70.+m Noise processes and phenomena
72.20.Ht High-field and nonlinear effects

Quantum Noise in Long Josephson Junctions

Vladislav V. Kurin and Igor V. Pimenov

AIP Conf. Proc. 780, pp. 33-36; doi:http://dx.doi.org/10.1063/1.2036692 (4 pages)

Online Publication Date: 24 August 2005

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In the framework of tunneling Hamiltonian the Langevin equation describing quasiclassical dynamics affected by quantum noise in Extended Josephson Junctions at voltages comparable to superconducting gap was derived. Voltage‐Current Characteristics and the shape of radiation spectrum produced was calculated in the high magnetic field approximation. Contributions both from tunneling, both quasiparticle and superconducting ones, and surface current were taken into account selfconsistently. It is found that fluctuations due to surface losses in electrodes contributes considerably to the linewidth. © 2005 American Institute of Physics
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74.40.-n Fluctuation phenomena
42.50.Lc Quantum fluctuations, quantum noise, and quantum jumps
85.25.Cp Josephson devices

Noise‐induced patterns in semiconductor nanostructures and time‐delayed feedback control

E. Schöll, G. Stegemann, A. Amann, and A. G. Balanov

AIP Conf. Proc. 780, pp. 37-40; doi:http://dx.doi.org/10.1063/1.2036693 (4 pages)

Online Publication Date: 24 August 2005

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We study the constructive influence of noise upon the nonlinear dynamics of current density patterns in semiconductor nanostructures, and its control by time delayed feedback methods. In particular, we investigate noise‐induced pattern formation in a double barrier resonant tunnelling diode described by a nonlinear reaction‐diffusion model. For this purpose the parameters of the system are fixed at values below the Hopf bifurcation where the only stable state of the deterministic system is a spatially inhomogeneous “filamentary” steady state, and oscillating space‐time patterns do not occur. We show that the addition of weak Gaussian white noise to the system gives rise to spatially inhomogeneous oscillations. As the noise intensity grows, the oscillations tend to become more and more spatially homogeneous, while simultaneously the temporal coherence of the oscillations decreases. We demonstrate that the application of a time delayed feedback loop, similar to that used in deterministic chaos control, allows one to control the temporal coherence and the time scales of the space‐time patterns. Furthermore, with increasing control strength, a transition from spatially inhomogeneous, spiky oscillations to spatially homogeneous oscillations can be induced. © 2005 American Institute of Physics
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05.45.-a Nonlinear dynamics and chaos
05.40.Ca Noise
72.20.Ht High-field and nonlinear effects

Control of noise‐induced oscillations in superlattices by delayed feedback

J. Hizanidis, A. G. Balanov, A. Amann, and E. Schöll

AIP Conf. Proc. 780, pp. 41-44; doi:http://dx.doi.org/10.1063/1.2036694 (4 pages)

Online Publication Date: 24 August 2005

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The dominant noise source, which effects the electron dynamics in semiconductor nano‐structures, is shot noise, which is associated with the tunneling of individual carriers across a potential barrier. We consider noise‐induced dynamics of electrons in a superlattice, which consists of alternating layers of two semiconductor materials with different band gaps. The parameters are fixed in the regime below the Hopf bifurcation of spatio‐temporal oscillations, where in the absence of noise the system rests in a fixed point. It is shown that in this case noise applied to the superlattice can induce quite coherent oscillations of the current through the device. While the regularity of these oscillations depends on the noise intensity, their dominant frequency remains almost constant with variation of the noise level in the system. Further, we demonstrate that a time‐delayed feedback scheme that was previously used to control purely temporal oscillations induced by noise, can not only enhance or deteriorate the regularity of stochastic spatio‐temporal patterns but also allows for the manipulation of the system’s timescales with varying time delay. © 2005 American Institute of Physics
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05.45.-a Nonlinear dynamics and chaos
05.40.Ca Noise
72.70.+m Noise processes and phenomena

Current and noise suppression in ac‐driven coherent transport

Sigmund Kohler, Michael Strass, Peter Hänggi, Miguel Rey, and Fernando Sols

AIP Conf. Proc. 780, pp. 45-50; doi:http://dx.doi.org/10.1063/1.2036695 (6 pages)

Online Publication Date: 24 August 2005

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We investigate the possibility to manipulate for the transport through heterostructures the dc current and its noise properties by an ac gate voltage. For a computation of the noise strength, we map the system to a tight‐binding model for which noise suppression by ac fields has been predicted recently. The quality of this description is tested by comparing the transmission of the tight‐binding system with a transfer‐matrix approach. © 2005 American Institute of Physics
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05.60.Gg Quantum transport
05.40.Ca Noise
72.70.+m Noise processes and phenomena
72.40.+w Photoconduction and photovoltaic effects
73.63.-b Electronic transport in nanoscale materials and structures

High‐Order Current Correlation Functions in Kondo Systems

A. Golub

AIP Conf. Proc. 780, pp. 51-54; doi:http://dx.doi.org/10.1063/1.2036696 (4 pages)

Online Publication Date: 24 August 2005

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We examine the statistics of current fluctuations in a junction with a quantum dot described by Kondo Hamiltonian. With the help of modified Keldysh technique we calculate the third current cumulant S3. As a function of applied bias S3 was obtained in three different regimes: Fermi liquid regime, crossover region and RG limit. Third cumulant shows strong non‐linear voltage dependence. Only in the asymptotical limit its linear dependence on V is recovered. © 2005 American Institute of Physics
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72.10.Fk Scattering by point defects, dislocations, surfaces, and other imperfections (including Kondo effect)
72.15.Qm Scattering mechanisms and Kondo effect
73.63.Kv Quantum dots
05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion

System Size Stochastic Resonance from the Viewpoint of the Nonequilibrium Potential

Horacio S. Wio

AIP Conf. Proc. 780, pp. 55-58; doi:http://dx.doi.org/10.1063/1.2036697 (4 pages)

Online Publication Date: 24 August 2005

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We study the phenomenon of system size stochastic resonance within the nonequilibrium potential’s (NEP) framework. We analyze a simple spatially extended system and show that through the analysis of the NEP we can obtain a clear physical interpretation of this phenomenon in a wide class of extended systems. © 2005 American Institute of Physics
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05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
02.50.-r Probability theory, stochastic processes, and statistics
87.10.-e General theory and mathematical aspects

Extensions of the Stochastic Model of the Overdamped Oscillator Applied to AC Ionic Conductivity in Solids

Juan Bisquert

AIP Conf. Proc. 780, pp. 59-62; doi:http://dx.doi.org/10.1063/1.2036698 (4 pages)

Online Publication Date: 24 August 2005

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Several extensions of the overdamped stochastic oscillator applied to ac ionic conduction in solids are discussed and compared. A shift of the equilibrium position towards the particle position introduces long range displacement (dc conductivity) absent in the simple oscillator. Time correlations in the friction modify the high frequency conductivity. Time correlations in the elastic force produce a negative conductivity at low frequency. © 2005 American Institute of Physics
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72.80.Ng Disordered solids
78.55.Qr Amorphous materials; glasses and other disordered solids

Fluctuation‐Dissipation Dispersion Relation for Systems with Slowly Varying Parameters

V. Belyi

AIP Conf. Proc. 780, pp. 63-66; doi:http://dx.doi.org/10.1063/1.2036699 (4 pages)

Online Publication Date: 24 August 2005

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A generalization of the fluctuation‐dissipation formula for systems with slowly varying parameters is given using the Langevin approach and momentum method. It is shown that spectral function of the fluctuations in these systems is determined not only by the dissipation but also by the derivations of the dispersion. The non Joule dispersion contribution is characterized by a new nonlocal effect originating from an additional phase shift between the force and response of the system. That phase shift results from the parametric control to the system. The general formalism is illustrated for an oscillating electrical circuit. It is shown that in that systems the dispersive contributions strongly affect the quality factor. © 2005 American Institute of Physics
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05.40.-a Fluctuation phenomena, random processes, noise, and Brownian motion
05.10.Gg Stochastic analysis methods (Fokker-Planck, Langevin, etc.)
07.50.Hp Electrical noise and shielding equipment

A New Version of the Fluctuation‐Dissipation Relations

S. F. Timashev and G. V. Vstovsky

AIP Conf. Proc. 780, pp. 67-70; doi:http://dx.doi.org/10.1063/1.2036700 (4 pages)

Online Publication Date: 24 August 2005

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Flicker‐Noise Spectroscopy as a new phenomenological approach for extracting information hidden in chaotic signals is presented. According to FNS, the information is provided by sequences of distinguishing types of irregularities — spikes, jumps, and discontinuities of derivatives of different orders, at all space‐time hierarchical levels of systems. In this case, the power spectra S(f) and difference moments Φ(2)(τ) of the 2nd order can be considered as generalization of fluctuation‐dissipation relations (FDRs) introduced usually for stationary processes near equilibrium state, because S(f) and Φ(2)(τ) are used in the case of strong non‐equilibrium processes also. In this paper we present examples of the FDRs for non‐equilibrium stationary processes (the Lèvy diffusion, isotropic fully developed turbulence). © 2005 American Institute of Physics
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05.40.Ca Noise
05.45.-a Nonlinear dynamics and chaos
05.40.Fb Random walks and Levy flights

Bispectrum Theory for Brownian Motion of Electrical Charge in Nonlinear RC‐circuit

Boris M. Grafov

AIP Conf. Proc. 780, pp. 71-74; doi:http://dx.doi.org/10.1063/1.2036701 (4 pages)

Online Publication Date: 24 August 2005

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The purpose of present report is to provide the bispectrum theory for Brownian motion of charge in the equilibrium non‐linear RC‐circuit (both resistance R and capacity C are nonlinear). The theory is based on the dual Langevin linear equations and on the Stratonovich fluctuation‐dissipation relation for the voltage noise bispectrum of resistor. The equation for the asymmetry of the equilibrium electrical charge fluctuations in the nonlinear capacity is derived. This equation differs essentially from the Gibbs thermodynamics equation in several aspects. In line with the bispectrum theory, the asymmetry of equilibrium charge fluctuations depends on the resistance nonlinearity and is independent of the capacitance nonlinearity. We arrive at the fundamental conclusion that the Gibbs statistical method is inapplicable to the description of nonlinear thermodynamic. © 2005 American Institute of Physics
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05.40.Jc Brownian motion
05.45.-a Nonlinear dynamics and chaos
07.50.Hp Electrical noise and shielding equipment

1/f Temperature Fluctuations in Solids

Hisayuki Higuchi, Shuichi Nakamura, and Shikayuki Ochi

AIP Conf. Proc. 780, pp. 75-78; doi:http://dx.doi.org/10.1063/1.2036702 (4 pages)

Online Publication Date: 24 August 2005

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We propose a 1/f temperature fluctuation model, based on the random walk of a phonon in solids. When the phonon reaches the boundary of the solid, it is absorbed by the boundary. Thus, the statistical characteristics of the absorbed phonon follow the Poisson counting process, i.e., the flow variance of the absorbed phonon is given by the average phonon flow. This relationship gives a 1/f fluctuation spectrum on the phonon density fluctuation that generates a 1/f temperature fluctuation. Using this relationship, we calculated a 1/f fluctuation in the resistors. The resulting power spectrum was about one tenth of the value reported by Voss, and the calculated Hooge’s constant was around one fourth of the reported value. These quantitative and qualitative coincidences support our 1/f temperature fluctuation model. © 2005 American Institute of Physics
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72.70.+m Noise processes and phenomena
05.40.Fb Random walks and Levy flights
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations

Properties of the Sum‐lengths of the Adjacent Level Crossing Intervals of the Chaotic Process Generated by the Logistic Map

Tsutomu Munakata and Wolfgang Schwarz

AIP Conf. Proc. 780, pp. 79-82; doi:http://dx.doi.org/10.1063/1.2036703 (4 pages)

Online Publication Date: 24 August 2005

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In this paper we analyzed the statistical properties of the sum‐lengths of the adjacent level crossing intervals of the chaotic process generated by the logistic map. We found a lot of new interesting phenomena and properties, which have never been observed in the past research of stationary random processes. © 2005 American Institute of Physics
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05.45.-a Nonlinear dynamics and chaos
02.50.-r Probability theory, stochastic processes, and statistics

First Passage Time Algorithm For Signal And Filtered Multi‐level Noise

Roy M. Howard

AIP Conf. Proc. 780, pp. 83-86; doi:http://dx.doi.org/10.1063/1.2036704 (4 pages)

Online Publication Date: 24 August 2005

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An algorithm for determining the level crossing probabilities of a bounded random walk associated with filtering of dichotomous, or multi‐level, noise is detailed. The algorithm is applied to the first passage time of a noise plus linear signal across a level by utilizing an orthogonal decomposition of the filtered noise. The algorithm is particularly suited to the transient noise case and good agreement with simulation results is demonstrated. © 2005 American Institute of Physics
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05.40.Ca Noise
05.40.Fb Random walks and Levy flights
02.50.Ey Stochastic processes

1/f ‐ type Noise in View of Phonons Interface Percolation Dynamics

S. V. Melkonyan, F. V. Gasparyan, V. M. Aroutiounian, and H. V. Asriyan

AIP Conf. Proc. 780, pp. 87-90; doi:http://dx.doi.org/10.1063/1.2036705 (4 pages)

Online Publication Date: 24 August 2005

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The influence of long‐wave acoustic longitudinal‐phonon percolation dynamics on 1/f ‐type noise level is modeled for homogeneous, non‐degenerated and bounded semiconductors. Phonons percolation from semiconductor media to environment regions via so‐called «refraction points» of phonons’ wave vector phase space is modeled within framework of the bulk mechanism of electron lattice mobility fluctuation. On the base of this mechanism it is shown, that semiconductor surface is the source of suppression of 1/f‐noise. It is indicated that in some certain applications of the Fluctuation Theory it is physically correct to use Schönfeld model to consider 1/f noises in semiconductors. © 2005 American Institute of Physics
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72.70.+m Noise processes and phenomena
72.10.Di Scattering by phonons, magnons, and other nonlocalized excitations

1/f Noise in Fractal Quaternionic Structures

T. Meškauskas and B. Kaulakys

AIP Conf. Proc. 780, pp. 91-94; doi:http://dx.doi.org/10.1063/1.2036706 (4 pages)

Online Publication Date: 24 August 2005

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We consider the logistic map over quaternions mathmath4 and different 2D projections of Mandelbrot set in 4D quaternionic space. The approximations (for finite number of iterations) of such 2D projections are fractal circles. We show that a point process defined by radiuses Rj of fractal circles exhibits 1/f noise. © 2005 American Institute of Physics
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05.40.Ca Noise
05.45.Df Fractals
02.50.Ey Stochastic processes

A Fast Stochastic Digital Signal Generator Based on Chaotic Iteration

Fu Chong, Wang Pei‐Rong, Xu Zhe, and Zhu Wei‐Yong

AIP Conf. Proc. 780, pp. 95-98; doi:http://dx.doi.org/10.1063/1.2036707 (4 pages)

Online Publication Date: 24 August 2005

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In this paper, an improved random bit recycle multi‐bit quantification algorithm based on Logistic mapping was proposed to resolve the high calculation complexity problem in generating stochastic sequence by using chaotic iteration and to improve the performance of the sequence. The balance and correlation property of the generated sequence were analyzed. The sequence was proved to obey the binary Bernoulli stochastic distribution and the auto and cross correlation was proved to obey normal distribution N(0,1/N). The simulation results indicate that the algorithm has excellent balance and correlation property. © 2005 American Institute of Physics
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05.45.Gg Control of chaos, applications of chaos

Estimating the variance of multiplicative noise

Dafydd Evans

AIP Conf. Proc. 780, pp. 99-102; doi:http://dx.doi.org/10.1063/1.2036708 (4 pages)

Online Publication Date: 24 August 2005

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When constructing non‐parametric models from noisy data, it is useful to have information regarding the statistical properties of the noise distribution. In many cases, such information is not explicitly available, and must be estimated directly from the data. Under the hypothesis of additive noise, algorithms for estimating the variance of the noise distribution have appeared in the literature. In this paper we present a novel algorithm for estimating the noise variance under a multiplicative hypothesis. © 2005 American Institute of Physics
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05.40.Ca Noise
02.50.Cw Probability theory
02.70.Rr General statistical methods
05.45.Tp Time series analysis

Microwave Noise In Biased AlGaN/GaN And AlGaN/AlN/GaN Channels

A. Matulionis, J. Liberis, and M. Ramonas

AIP Conf. Proc. 780, pp. 105-108; doi:http://dx.doi.org/10.1063/1.2036709 (4 pages) | Cited 1 time

Online Publication Date: 24 August 2005

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Noise temperature is measured at 10 GHz at room temperature for biased AlGaN/GaN and AlGaN/AlN/GaN two‐dimensional channels. Interpretation of the experimental results, through Monte Carlo simulation, takes into account interaction of hot electrons with phonons. The calculated longitudinal noise temperature exceeds the transverse one, but the resultant anisotropy of noise becomes substantially weaker when accumulation of nonequilibrium (hot) optical phonons is taken into account. The considered intense interaction of hot electrons with hot phonons and weak coupling with the thermal bath shifts the hot‐electron‐hot‐phonon subsystem closer to the equilibrium at the elevated temperature as compared with the hot‐electron subsystem interacting with the equilibrium phonons. © 2005 American Institute of Physics
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72.70.+m Noise processes and phenomena
71.38.-k Polarons and electron-phonon interactions
63.20.K- Phonon interactions
72.20.Ht High-field and nonlinear effects
73.63.Hs Quantum wells

Generation of Interface States Due to Quantum‐Dot Growth in Au/GaAs Schottky Diode Structures

W. Choi, H. Nam, J. Lee, B. Yu, J. Song, H. Yang, and A. Chovet

AIP Conf. Proc. 780, pp. 109-112; doi:http://dx.doi.org/10.1063/1.2036710 (4 pages)

Online Publication Date: 24 August 2005

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We investigated the low‐frequency excess electrical noise characteristics of Au/GaAs Shottky diodes with and without self‐assembled InAs quantum‐dot layer grown by molecular beam epitaxy. The noise intensity shows 1/f behavior and non‐quadratic current dependences. The current dependence is explained by the generation of interface states increasing toward the conduction band edge, in the diodes with quantum‐dot layer, utilizing the model of random walk of electrons involving interface states. The extracted energy distributions of the interface states for the diodes with and without quantum‐dot layer, are presented. © 2005 American Institute of Physics
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73.20.At Surface states, band structure, electron density of states
85.30.Hi Surface barrier, boundary, and point contact devices
72.70.+m Noise processes and phenomena

1/f Noise Enhancement In GaAs

J. I. Izpura and J. Malo

AIP Conf. Proc. 780, pp. 113-116; doi:http://dx.doi.org/10.1063/1.2036711 (4 pages)

Online Publication Date: 24 August 2005

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This paper presents a way to induce 1/f‐like resistance noise in channels from their surface. Random fluctuations of surface charge are created optically in a small area of a GaAs surface by weak and localized optical pulses. The non null surface conductivity of n‐GaAs and its surface space charge region, form a slow transmission line that allows the relaxation of such fluctuations over the surface. Their Field Effect on the GaAs channel as they diffuse, leads to a resistance noise with 1/f character well below the Hz range for the usual size of samples. © 2005 American Institute of Physics
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73.50.Td Noise processes and phenomena
85.30.De Semiconductor-device characterization, design, and modeling
73.25.+i Surface conductivity and carrier phenomena
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