Characterization of ultra-thin oxides using electrical C-V and I-V measurements

Hauser, J. R.; Ahmed, K.

doi:doi:10.1063/1.56801

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AIP Conference Proceedings / Volume 449

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Characterization of ultra-thin oxides using electrical C-V and I-V measurements

AIP Conf. Proc. 449, pp. 235-239; doi:http://dx.doi.org/10.1063/1.56801 (5 pages)

The 1998 international conference on characterization and metrology for ULSI technology

Date: 23-27 March 1998

Location: Gaithersburg, Maryland (USA)

J. R. Hauser and K. Ahmed

Department of Electrical and Computer Engineering, North Carolina State University, Raleigh, North Carolina 27695

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Abstract

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The measurement of electrical parameters from capacitance-voltage (C-V) and current-voltage (I-V) curves provides a fast means of characterizing oxides in MOS capacitors or transistor structures. For ultra-thin oxides (<2 nm), conventional, well-established techniques must be reconsidered and modified due to several increasingly important physical effects including polysilicon depletion and surface quantum mechanical effects. In this work these effects have been incorporated into a rapid analysis program for extracting ultra-thin oxide parameters from measured C-V and I-V data. The technique uses a physically based model of structure charge and potential combined with a non-linear least squares fitting technique to extract device parameters. © 1998 American Institute of Physics.