Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors

Mori, N.; Hiejima, K.; Kubo, H.; Patanè, A.; Eaves, L.

doi:doi:10.1063/1.3666239

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AIP Conference Proceedings / Volume 1399

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Magnetic Field Modulated Photoreflectance Study of the Electron Effective Mass in Dilute Nitride Semiconductors

AIP Conf. Proc. 1399, pp. 23-24; doi:http://dx.doi.org/10.1063/1.3666239 (2 pages)

PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors

Date: 25–30 July 2010

Location: Seoul, (Korea)

N. Mori¹, K. Hiejima¹, H. Kubo¹, A. Patanè², and L. Eaves²

¹Division of Electrical, Electronic and Information Engineering, Graduate School of Engineering, Osaka University, 2‐1 Yamada‐oka, Suita, Osaka 565‐0871, Japan
²School of Physics & Astronomy, University of Nottingham, Nottingham NG7 2RD, United Kingdom

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Abstract

Related Content

Magnetic field modulated photoreflectance measurements are performed on the dilute nitride semiconductor Ga(AsN) in quantizing magnetic fields. From the measured cyclotron energies, the conduction band effective mass and its dependence on the nitrogen content are determined. The effective mass is found to become significantly heavier in samples with high nitrogen composition (>0.1%).

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KEYWORDS and PACS

Keywords

magnetic fields, quantization, photoreflectance, magnetic transitions

PACS

07.55.Db

Generation of magnetic fields; magnets
03.70.+k

Theory of quantized fields
78.20.Mg

Photorefractive effects
75.30.Kz

Magnetic phase boundaries (including classical and quantum magnetic transitions, metamagnetism, etc.)