Fabrication and Characterization of a‐Si Micro and Nano‐Gap Structure for Electrochemical Sensor

Dhahi, Th. S.; Hashim, U.; Ahmed, N. M.; Ali, Md. Eaqub

doi:doi:10.1063/1.3587001

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AIP Conference Proceedings / Volume 1341

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Fabrication and Characterization of a‐Si Micro and Nano‐Gap Structure for Electrochemical Sensor

AIP Conf. Proc. 1341, pp. 277-282; doi:http://dx.doi.org/10.1063/1.3587001 (6 pages)

ENABLING SCIENCE AND NANOTECHNOLOGY: 2010 International Conference On Enabling Science And Nanotechnology Escinano2010

Date: 1–3 December 2010

Location: Kuala Lumpur, (Malaysia)

Th. S. Dhahi¹, U. Hashim¹, N. M. Ahmed², and Md. Eaqub Ali¹

¹Institute of Nano Electronic Engineering (INEE), University Malaysia Perlis (UniMAP)
²School of Physics, University Sains Malaysia (USM)

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The development and application of micro gap for electrochemical sensors and biomolecule detection are reviewed in this article. The preparation methods for micro‐ and nano‐gaps and their properties are discussed along with their advantages in electrochemical sensors and biomolecule detection. Biology and medicine have seen great advances in biosensors and biochips capable of characterizing and quantifying electrochemical sensor. To understand the important relationship between sensibility and nano structure, we introduce the fabrication and characterization of micro‐ and nano‐gap structures for electrochemical sensor. In this paper, two mask designs are proposed. The first is the lateral micro‐ and nano‐gap with aluminum (Al) electrode, and the second mask is for pad Al electrode pattern. Lateral micro‐gaps are introduced in the fabrication process using amorphous silicon (a‐Si) and Al as an electrode. Conventional ultraviolet lithography technique and dry etching for a‐Si layer with wet etching for Al surface processes are used to fabricate the micro‐ and nano‐gaps based on the standard complementary metal‐oxide‐semiconductor technology and characterization of its conductivity. Electrical characterization is applied using Semiconductor Parameter Analyzer, Spectrum Analyzer, current‐voltage (IV)‐capacitance‐voltage (CV) station for electrical characteristics. Conductivity, resistance, and capacitance tests are performed to characterize and verify the structure of the device, resulting in a small micro‐gap as revealed by a further IV curve result showing a current in nano amps. The characteristics of the fabricated gap are close to those of a micro‐gap, as verified by the literature.