STRESS-INDUCED PHENOMENA IN METALLIZATION: Seventh International Workshop on Stress-Induced Phenomena in Metallization

Seventh International Workshop on Stress-Induced Phenomena in Metallization

Paul S. Ho, The University of Texas at Austin, Interconnect and Packaging Group, Austin, TX, USA ; Cynthia A. Volkert, Institute for Materials Research, Karlsruhe Research Center, Karlsruhe, GERMANY ; Tomoji Nakamura, Fujitsu Laboratories, Ltd., Tokyo, Japan ; Shefford P. Baker, Cornell University, Department of Materials Science and Engineering, Ithaca, NY, USA

Conference Location and Date: Austin, Texas, 14-16 June 2004

Subseries: Materials Physics and Applications

Published December 2004; ISBN 0-7354-0225-6 One Volume, Print; 280 pages; 6 3/8 X 9 1/4 inches; Hardcover; $136.00

Readership: Scientists, engineers, and reserachers working in reliability of microelectronics

All papers were peer reviwed. Continuing the spirit of the previous workshops, the proceedings contain new research results and advances in basic understanding of stress-induced phenomena in metallization. The current technology drive to implement low dielectric constant materials into copper metallization has brought new and significant challenges in process integration and reliability. Stresses arising in metallizations and surrounding dielectric structures due to thermal mismatch, electromigration, microstructure changes or process integration can lead to damage and failure of interconnect structures. Understanding stress-related phenomena in new materials and structures becomes critical for reliability improvement and metallization development. This is reflected in the papers included in the proceedings, which report results on electromigration, thermal stresses and void formation in copper-low k interconnect structures. Included also are new results on fracture of low k dielectric structures, an important research area for reliability and integration of copper metallization.

Related AIP Titles: