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Top 20 Most Read Articles
January 2012
The 20 articles with the most full-text downloads during the month, in descending order.
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From The Lab to The Fab: Transistors to Integrated Circuits AIP Conf. Proc. 683, pp. 3-39; doi:http://dx.doi.org/10.1063/1.1622451 (37 pages) Online Publication Date: 1 October 2003
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Transistor action was experimentally observed by John Bardeen and Walter Brattain in n‐type polycrystalline germanium on December 16, 1947 (and subsequently polycrystalline silicon) as a result of the judicious placement of gold‐plated probe tips in nearby single crystal grains of the polycrystalline material (i.e., the point‐contact semiconductor amplifier, often referred to as the point‐contact transistor).The device configuration exploited the inversion layer as the channel through which most of the emitted (minority) carriers were transported from the emitter to the collector. The point‐contact transistor was manufactured for ten years starting in 1951 by the Western Electric Division of AT&T. The a priori tuning of the point‐contact transistor parameters, however, was not simple inasmuch as the device was dependent on the detailed surface structure and, therefore, very sensitive to humidity and temperature as well as exhibiting high noise levels. Accordingly, the devices differed significantly in their characteristics and electrical instabilities leading to “burnout” were not uncommon. With the implementation of crystalline semiconductor materials in the early 1950s, however, p‐n junction (bulk) transistors began replacing the point‐contact transistor, silicon began replacing germanium and the transfer of transistor technology from the lab to the lab accelerated. We shall review the historical route by which single crystalline materials were developed and the accompanying methodologies of transistor fabrication, leading to the onset of the Integrated Circuit (IC) era. Finally, highlights of the early years of the IC era will be reviewed from the 256 bit through the 4M DRAM. Elements of IC scaling and the role of Moore’s Law in setting the parameters by which the IC industry’s growth was monitored will be discussed. © 2003 American Institute of Physics |
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Strongly coupled single quantum dot in a photonic crystal waveguide cavity AIP Conf. Proc. 1399, pp. 1017-1018; doi:http://dx.doi.org/10.1063/1.3666724 (2 pages)
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Cavities embedded in photonic crystal waveguides offer a promising route towards large scale integration of coupled resonators for quantum electrodynamics applications. Here a strongly coupled system consisting of a single quantum dot and a cavity formed by the local width modulation of a photonic crystal waveguide is demonstrated. The resonance originating from the cavity is clearly identified from microphotoluminescence mapping of the scattered signal along the waveguide. The exciton‐photon strong coupling regime is obtained by temperature control. |
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Channel Drop Filter Application of 2‐D Photonic Crystal AIP Conf. Proc. 1324, pp. 419-421; doi:http://dx.doi.org/10.1063/1.3526249 (3 pages) Online Publication Date: 3 December 2010
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A channel drop filter of 2‐D photonic crystal of square lattices with defect has been studied. This drop filter consist a point defect cavity near an air waveguide in 2‐D photonic crystal. The comparison between chalcogenide As2S3 and Si materials is described to choose as 2‐D photonic crystals material for channel drop filter application in optical communication. |
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Slow light based on material and waveguide dispersion AIP Conf. Proc. 1176, pp. 75-77; doi:http://dx.doi.org/10.1063/1.3253926 (3 pages) Online Publication Date: 14 October 2009
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We study slow light pulse propagation in a photonic crystal structure consisting of a dispersive and absorptive dielectric material and compare it with the constant wave case. The group index and the transmission are investigated for the example of an ensemble of semiconductor quantum dots embedded in a photonic crystal waveguide by FDTD Maxwell‐Bloch simulations. The total group index scales linearly with the material based group index while the transmission has a power dependency on the material based absorption coefficient. |
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Preface: Physics of Semiconductors AIP Conf. Proc. 1399, pp. 3-3; doi:http://dx.doi.org/10.1063/1.3671439 (1 page)
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AIP Conf. Proc. 1419, pp. 1-1; doi:http://dx.doi.org/10.1063/1.3667322 (1 page)
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Topological Optimization of Beam Cross Section by Employing Extrusion Constraint AIP Conf. Proc. 1233, pp. 964-969; doi:http://dx.doi.org/10.1063/1.3452311 (6 pages) Online Publication Date: 28 May 2010
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Optimal cross‐section design of beams plays a characteristic role which signifies the rigidity of the member in bending, shear and torsion load conditions. Practically modern overhead crane girders, railway bridge girders or rail tracks etc. require constant cross‐section along the axial direction. Conventional topological optimization modeling procedures in such cases prove inadequate for the reason that these procedures generate non‐uniform topologies along the axis of the bending member. To examine optimal topology of those structural bending members which commonly possess constant cross‐section along the axis the topology optimization with extrusion constraint is more appropriate. The extrusion constraint method suggests a fresh approach to investigate optimal topologies of beam cross‐section under the influence of realistic loading condition across the section at the beginning of design cycle. Presented study is focused upon the influence of various configuration and location of the load and boundary conditions on the topology of the of the beam cross‐section which was not possible prior to the materialization of the extrusion or stamping constraint method. Several realistic loads and boundary conditions have been applied on the 3D beam model and optimal cross‐section topologies obtained have uniform compliance history and convergent solutions. The lowest compliance criteria have been suggested to choose topologies as furthers shape and size optimization candidates during beam design process. |
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PREFACE: International Congress on Advances in Applied Physics and Materials Science (APMAS2011) AIP Conf. Proc. 1400, pp. 1-1; doi:http://dx.doi.org/10.1063/1.3663074 (1 page)
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Characterization of ultra-thin oxides using electrical C-V and I-V measurements AIP Conf. Proc. 449, pp. 235-239; doi:http://dx.doi.org/10.1063/1.56801 (5 pages) Online Publication Date: 27 March 2008
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The measurement of electrical parameters from capacitance-voltage (C-V) and current-voltage (I-V) curves provides a fast means of characterizing oxides in MOS capacitors or transistor structures. For ultra-thin oxides (<2 nm), conventional, well-established techniques must be reconsidered and modified due to several increasingly important physical effects including polysilicon depletion and surface quantum mechanical effects. In this work these effects have been incorporated into a rapid analysis program for extracting ultra-thin oxide parameters from measured C-V and I-V data. The technique uses a physically based model of structure charge and potential combined with a non-linear least squares fitting technique to extract device parameters. © 1998 American Institute of Physics. |
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Preface: What Fire is in Mine Ears: Progress in Auditory Biomechanics AIP Conf. Proc. 1403, pp. 1-1; doi:http://dx.doi.org/10.1063/1.3658051 (1 page) Online Publication Date: 7 November 2011
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Studying the sintering behavior of BeOx–SiC1−x Composite ceramic Material AIP Conf. Proc. 1400, pp. 33-36; doi:http://dx.doi.org/10.1063/1.3663080 (4 pages)
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The sintering behavior for BeO‐SiC compacts composite ceramic at different sintering temperatures in air were conducted, resulting data indicated that the percentage of SiC (Wt% 5) sintered at 800 C° lead to higher sintering density of (1.80 gm∕cm3). The x‐ray diffraction pattern analysis indicated nothing change concerning the crystal structure. Microstructure development has been studied as a function SiC content. Silicon carbide found to be suppressed the sinter ability of the matrix BeO powder. |
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Performance Evaluation of 8 PSK and 16 PSK using Reed—Solomon Codes AIP Conf. Proc. 1324, pp. 365-368; doi:http://dx.doi.org/10.1063/1.3526235 (4 pages) Online Publication Date: 3 December 2010
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Many Forward Error correction techniques are used for error correction. In this paper we have used Reed‐ Solomon Codes for error correction and detection,. which are type of block codes. In these types of codes redundant information is added at the end of message to detect and correct error. R‐S Codes are used to recover original codeword from corrupted received word. R‐S Codes performs well against burst error. In this paper we develop a Simulation program using MATLAB for Reed ‐Solomon Codes using modulation schemes ie.PSK using AWGN and their simulation results are evaluated. |
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Preface: 15th International Conference on Narrow Gap Systems (NGS15) AIP Conf. Proc. 1416, pp. 1-1; doi:http://dx.doi.org/10.1063/1.3671684 (1 page)
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AIP Conf. Proc. 1399, pp. 23-24; doi:http://dx.doi.org/10.1063/1.3666239 (2 pages)
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Magnetic field modulated photoreflectance measurements are performed on the dilute nitride semiconductor Ga(AsN) in quantizing magnetic fields. From the measured cyclotron energies, the conduction band effective mass and its dependence on the nitrogen content are determined. The effective mass is found to become significantly heavier in samples with high nitrogen composition (>0.1%). |
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A History of Narrow Gap Semiconductors and Systems: from Graphite to Graphene AIP Conf. Proc. 1416, pp. 9-13; doi:http://dx.doi.org/10.1063/1.3671685 (5 pages)
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A brief review of developments in narrow gap semiconductors and structures is provided based on tracing emphases in materials, physics and devices through the series of conferences bearing that designation (or some variant of it). |
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AIP Conf. Proc. 1400, pp. 312-318; doi:http://dx.doi.org/10.1063/1.3663134 (7 pages)
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A two‐dimensional Steady‐state, mathematical modeling has been presented for the pollutant released from an elevated source in an inversion layer. The study presents a treatment for computing the pollutant concentration distribution under a physically realistic boundary condition which considers the ground as an absorber‐reflector surface for the pollutant simultaneously. The wind speed is parameterized in terms of vertical height using the power law profile. The partial differential equation describing the advection‐diffusion of pollutants has been solved using separation of variables method. An upper boundary condition which assumes the presence of capping inversion is taken into consideration. The mathematical formulation for the pollutant concentration distribution obtained in the present treatment is given in terms of Bessel and Gamma functions. |
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AIP Conf. Proc. 1241, pp. 13-17; doi:http://dx.doi.org/10.1063/1.3462628 (5 pages) Online Publication Date: 28 June 2010
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This talk is largely based on the work now published in Riess et al. (2007) |
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Design A 1Bit Low Power Full Adder Using Cadence Tool AIP Conf. Proc. 1324, pp. 373-376; doi:http://dx.doi.org/10.1063/1.3526237 (4 pages) Online Publication Date: 3 December 2010
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This paper presents a novel low‐power majority function‐based 1‐bit full adder that uses MOS capacitors in its structure. The power consumption and general characteristics of an adder are then compared against low power adders, the transmission function adder (TFA) and the conventional CMOS full adder. The circuits simulated using CADENCE tool 0.18 μm CMOS process technology. The power consumption is decreased by 22% and delay is increased by 347ps. |
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Characterization of ZnO Thin Film Deposited by Sol‐Gel Process AIP Conf. Proc. 1324, pp. 399-401; doi:http://dx.doi.org/10.1063/1.3526243 (3 pages) Online Publication Date: 3 December 2010
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ZnO is a wide band gap semiconductor which is used as transparent electrode in solar cells, chemical and gas sensors and light emitting diode etc. This paper reports the sol gel preparation and characterization of ZnO thin film. ZnO thin film was prepared by sol‐gel process using zinc acetate dehydrate as a precursor, 2‐methoxy ethanol as a solvent and monoethanolamine (MEA) as a stabilizer. The solution was deposited on n‐type silicon (111) substrate by spin coating at 3000 rpm. Hydrolysis and condensation process produced a complex solution. After drying at 300° C, samples were annealed at 575° C in nitrogen ambient. Precise control of concentration of precursor, solvent used, spinning speed of the substrate and heat treatment conditions, are the factors which strongly affect the crystallographic orientation and morphology of the resultant ZnO films. The crystalinity of the film as found from X‐ray diffraction (XRD) had different orientations, with (002) orientation as most intense having a grain size of 44 nm. |
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Hard X‐ray Phase‐Contrast Tomographic Nanoimaging AIP Conf. Proc. 1365, pp. 239-242; doi:http://dx.doi.org/10.1063/1.3625348 (4 pages) Online Publication Date: 16 September 2011
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Synchrotron‐based full‐field tomographic microscopy established itself as a tool for noninvasive investigations. Many beamlines worldwide routinely achieve micrometer spatial resolution while the isotropic 100‐nm barrier is reached and trespassed only by few instruments, mainly in the soft x‐ray regime. We present an x‐ray, full‐field microscope with tomographic capabilities operating at 10 keV and with a 3D isotropic resolution of 144 nm recently installed at the TOMCAT beamline of the Swiss Light Source. Custom optical components, including a beam‐shaping condenser and phase‐shifting dot arrays, were used to obtain an ideal, aperture‐matched sample illumination and very sensitive phase‐contrast imaging. The instrument has been successfully used for the nondestructive, volumetric investigation of single, unstained cells. |
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Sandia National Laboratories
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